document number: 65540 www.vishay.com s10-1820-rev. c, 06-sep-10 1 automotive p-channel 40 v (d-s) 175 c mosfet sqj463ep vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified d ? find out more about vishays automotive grade product requirements at: www.vishay.com/applications notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr-4 material). d. parametric verification ongoing. e. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak so-8l. the end of the lead terminal is exposed co pper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not r equired to ensure adequate bottom side solder interconnection. f. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. product summary v ds (v) - 40 r ds(on) ( ) at v gs = - 10 v 0.010 r ds(on) ( ) at v gs = - 4.5 v 0.015 i d (a) - 30 configuration single s g d p-channel mosfet 4 6.15 mm powerpak ? so-8l single 5.13 mm 3 2 1 g s s s d ordering information package powerpak so-8l lead (pb)-free and halo gen-free SQJ463EP-T1-GE3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d - 30 a t c = 125 c - 30 continuous source curre nt (diode conduction) a i s - 30 pulsed drain current b i dm - 120 single pulse avalanche current l = 0.1 mh i as - 44 single pulse avalanche energy e as 97 mj maximum power dissipation b t c = 25 c p d 83 w t c = 125 c 28 operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (peak temperature) e, f 260 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 65 c/w junction-to-case (drain) r thjc 1.8
www.vishay.com document number: 65540 2 s10-1820-rev. c, 06-sep-10 sqj463ep vishay siliconix notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings may cause permanen t damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the sp ecifications is not implied. exposure to absolute maximum rating conditions for extended peri ods may affect de vice reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = - 250 a - 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 40 v - - - 1 a v gs = 0 v v ds = - 40 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 40 v, t j = 175 c - - - 150 on-state drain current a i d(on) v gs = - 10 v v ds - 5 v - 30 - - a drain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 18 a - 0.008 0.010 v gs = - 4.5 v i d = - 15 a - 0.012 0.015 v gs = - 10 v i d = - 18 a; t j = 125 c - 0.013 0.015 v gs = - 10 v i d = - 18 a; t j = 175 c - 0.015 0.018 forward transconductance b g fs v ds = - 15 v, i d = - 18 a - 45 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 20 v, f = 1 mhz - 4700 5875 pf output capacitance c oss - 630 790 reverse transfer capacitance c rss - 460 575 total gate charge c q g v gs = - 10 v v ds = - 20 v, i d = - 18.6 a - 98 150 nc gate-source charge c q gs -14- gate-drain charge c q gd -23- turn-on delay time c t d(on) v dd = - 20 v, r l = 20 i d ? - 1 a, v gen = - 10 v, r g = 6.0 -2132 ns rise time c t r -1726 turn-off delay time c t d(off) - 121 182 fall time c t f -5177 source-drain diode ratings and characteristics b pulsed current a i sm - - - 120 a forward voltage v sd i f = - 4.5 a, v gs = 0 v - - 0.8 - 1.2 v
document number: 65540 www.vishay.com s10-1820-rev. c, 06-sep-10 3 sqj463ep vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 60 0246810 v gs =10vthru5v v gs =4v v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 3 v 0 15 30 45 60 75 0 102030405060 t c = 125 c t c = - 55 c t c = 25 c i d - drain current (a) - transconductance (s) g fs c rss 0 1000 2000 3000 4000 5000 6000 7000 010203040 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0 10 20 30 40 50 012345 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0.00 0.01 0.02 0.03 0.04 0.05 0 102030405060 v gs =4.5v v gs =10v - on-resistance ( ) r ds(on) i d - drain current (a) 0 2 4 6 8 10 0 102030405060708090100 i d = 18.6 a v ds =20v - gate-to-source voltage (v) q g - total gate charge (nc) v gs
www.vishay.com document number: 65540 4 s10-1820-rev. c, 06-sep-10 sqj463ep vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diode forward voltage threshold voltage drain source br eakdown vs. junction temperature 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 175 i d =18.6a v gs =10v t j - junction temperature (c) (normalized) - on-resistance r ds(on) 0.00 0.02 0.04 0.06 0.08 0.10 0246810 t j = 25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s - 0.4 - 0.1 0.2 0.5 0.8 1.1 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a i d =1ma variance (v) v gs(th) t j - temperature (c) - 54 - 50 - 25 25 75 125 0 50 100 175 150 - 52 - 48 - 50 - 46 - 44 - 42 v d s - drain-to- s ource voltage (v) t j - junction temperature (c) i d = 1 ma
document number: 65540 www.vishay.com s10-1820-rev. c, 06-sep-10 5 sqj463ep vishay siliconix thermal ratings (t c = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied i d - drain current (a) t c = 25 c single pulse bvdss limited limited by r * ds(on) 100 ms, 1s, 10 s, dc 10 ms 1 ms i dm limited 100 s i d limited 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are wave p u lse d u ration (s) n ormalized effective transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm
www.vishay.com document number: 65540 6 s10-1820-rev. c, 06-sep-10 sqj463ep vishay siliconix thermal ratings (t c = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062", double sided with 2 oz . copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufa cturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65540 . 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 d u ty cycle = 0.5 sq u are wave p u lse d u ration (s) n ormalized effective transient thermal impedance single p u lse 0.02 0.05
document number: 69003 www.vishay.com 27-oct-08 1 package information vishay siliconix powerpak ? so-8l case outline a1 bb 1e d1 e1 l1 b 2 e2 l1 e d l 0.25 ga u ge line a c w w2 w1 w3 b 3 b 4 d3 d3 e2 w1 w2 w3 b 3 b 4 k f d2 d2 topside v iew backside v iew (si n gle) backside v iew (dual)
www.vishay.com document number: 69003 2 27-oct-08 package information vishay siliconix millimeters inches dim. min. nom. max. min. nom. max. a 1.00 1.07 1.14 0.039 0.042 0.045 a1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 d 5.00 5.13 5.25 0.197 0.202 0.207 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.86 3.96 4.06 0.152 0.156 0.160 d3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 bsc 0.050 bsc e 6.05 6.15 6.25 0.238 0.242 0.246 e1 4.27 4.37 4.47 0.168 0.172 0.176 e2 3.18 3.28 3.38 0.125 0.129 0.133 f - - 0.15 - - 0.006 l 0.62 0.72 0.82 0.024 0.028 0.032 l1 0.92 1.07 1.22 0.036 0.042 0.048 k 0.51 0.020 w 0.23 0.009 w 1 0.41 0.016 w 2 2.82 0.111 w 3 2.96 0.117 0 - 10 0 - 10 ecn: c-08953-rev. a, 27-oct-08 d w g: 5976
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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